Generalized model of dielectric breakdown for thick and thin SiO2 and Si3N4 films combining percolation model and constant-ΔE model

摘要

To realize accurate prediction of TDDB lifetimes, appropriate extractions of various parameters are indispensable. While the TDDB statistics such as the thickness dependence of Weibull slope seems to be successfully described by the percolation model, it has been revealed in this work that the percolation model is not capable to explain the TDDB statistics of thick SiO and SiN films. To comprehensively describe the TDDB statistics for whole thickness region, we propose the generalized model by combining the percolation model with the constant-ΔE model which we proposed as the TDDB mechanism for thick Si3N4 MIM structures.