Gate-Driver for High-Current Silicon-Carbide Semiconductor Power Modules

机译：大电流碳化硅半导体功率模块的栅极驱动器

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1.Driving voltage: +20 V, −5 V2.Driving peak current: ±14 A3.Operation temperature: -40 - 150 °C4.UVLO, short-circuit protection,overcurrent detection, soft shutdown

机译：1.驱动电压：+20 V，-5 V 2.驱动峰值电流：±14 A 3，工作温度：-40-150°C 4.UVLO，短路保护，过电流检测，软关机

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《CPES annual conference;Center for Power Electronics Systems》|2017年|1-3|共3页
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Gate-Driver for High-Current Silicon-Carbide Semiconductor Power Modules

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