Manufacturing of HfO_XN_Y films using reactive magnetron sputtering for ISFET application

摘要

Hafnium Oxide-Nitride films were deposited using reactive magnetron sputtering in O_2/N_2/Ar gas mixture. Deposition was planned according to Taguchi optimization method. Morphology of fabricated layers was tested using AFM technique (R_a=0.2÷1,0 nm). Thickness of HfO_XN_Y films was measured using spectroscopic ellipsometry (t=45÷54 nm). Afterwards MIS structures were created by Al metallization process then layers were electrically characterised using I-V and C-V measurements. This allowed to calculate the electrical parameters of layers such as: flat-band voltage U_(FB), dielectric constant K_i, interface state trap density D_(it) and effective charge Q_(eff). Subsequently, deposited HfO_xN_y layers were annealed in PDA process (40 min 400 °C 100% N_2) after which the electrical characterization was performed again.