Advances in SiGe HBT Technology in Europe

摘要

In this paper, advances in SiGe HBT process technology in Europe and emerging new product application areas are discussed. High-speed bipolar and BiCMOS technologies with f{sub}T and f{sub}(max) values in excess of 200 GHz have been used to realize fundamental building blocks for applications like 60 GHz wireless communications and 77 GHz automotive radar. Highly integrated SiGe MMICs for these frequency bands are within reach now.