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Advanced node-splitting techniques for radiation-hardened analog/mixed-signal circuits

机译:用于辐射硬化的模拟/混合信号电路的高级节点分离技术

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Errors due to radiation effects are a growing reliability concern for modern aerospace systems. In particular, single-event transients (SETs) and single-event upsets (SEUs) due to charged ion strikes in integrated circuits (ICs) have resulted in data corruption and operational failures in space systems. As IC feature sizes continue to shrink, the vulnerability of electronic systems worsens as smaller and smaller amounts of single-event charge become sufficient to alter the voltages on critical circuit nodes. Modern radiation-hardened systems rely on radiation-hardened-by-design (RHBD) techniques to reduce radiation vulnerability in commercially available IC processes without requiring changes to the manufacturing process itself. Several new RHBD concepts that are specifically applicable to analog and mixed-signal circuits have been developed in recent years. The RHBD concept of ¿¿¿node splitting¿¿¿ to create parallel signal paths has been shown to improve single-event hardness in switched-capacitor and continuous-time analog and mixed-signal circuits. Examples of HNS (hardening via node splitting) include dual- and quad-path switching capacitor signal processing circuits, and peeled layouts in operational amplifiers and comparators. This paper provides an overview of the HNS concept, with an emphasis on two new techniques currently under development: massively multiple peeled layouts (MMPL), and smart peeling. A circuit with a peeled layout is split into two or more parallel subcircuits that are connected at the input(s) and output(s), but with separate internal nodes. Absent any radiation effects, components are sized such that the peeled circuit behaves almost identically to the original unpeeled circuit in terms of electrical performance. However, in the event of an ion strike that upsets one of the subcircuits, the remaining subcircuit(s) will continue to operate normally and thereby mitigate the resulting single-event transient at the output. MMPL and smart peelin- are newly developed refinements of the basic peeled layout concept. Massively multiple peeled layouts take advantage of the layout restrictions imposed by increasingly constrained design rules in very deep submicron IC processes. In an MMPL design, critical subcircuits and sensitive nodes may be split into 4, 8, 16, or more parallel paths to provide additional hardness benefits. The MMPL technique appears particularly well suited to critical global subcircuits such as bias circuits and voltage references. Smart peeling operates in a different fashion. Instead of the brute-force ¿¿¿wire-ORing¿¿¿ of two or more signal paths into completely separate subcircuits, a circuit with smart peeling only has select internal nodes separated such that the struck path is disabled by the collected charge, leaving the remaining path to maintain the integrity of the signal. Circuit examples of MMPL and smart peeling are presented, with simulation results that illustrate the efficacy of these concepts in hardening continuous-time AMS circuits without significant penalties in overall circuit area, power, or electrical performance.
机译:由于辐射效应导致的错误是现代航空航天系统的可靠性问题。特别地,由于集成电路(ICS)中的带电离子撞击引起的单事件瞬态(集)和单事件UPSET(SEUS)导致空间系统中的数据损坏和操作失败。随着IC特征尺寸继续缩小,电子系统的脆弱性变得更小,更小的单事件电荷变得足以改变关键电路节点上的电压。现代辐射硬化系统依赖于辐射 - 硬化 - 逐个设计(RHBD)技术,以减少市售IC过程中的辐射脆弱性,而不需要改变制造过程本身。近年来开发了几种专门适用于模拟和混合信号电路的新RHBD概念。已经示出了¿¿¿节点分裂仪的RHBD概念以改善开关电容器和连续时间模拟和混合信号电路中的单事件硬度。 HNS的示例(通过节点分割硬化)包括双路和四路径切换电容器信号处理电路,以及在运算放大器和比较器中的去皮布局。本文概述了HNS概念,重点是目前正在开发的两种新技术:大量的多重去皮布局(MMPL)和智能剥离。具有剥离布局的电路被分成在输入(S)和输出处连接的两个或更多个并行子电路,但是具有单独的内部节点。缺乏任何辐射效应,大小的组件使得剥离电路在电性能方面几乎与原始的未剥离电路相同。然而,在离子击中的情况下,在扰动其中一个子电路的情况下,剩余的子电路将继续正常运行,从而减轻了输出处的所得单事件瞬态。 MMPL和SMART PEELIN-是基本的被剥离布局概念的新开发的改进。大量的多个去皮布局利用在非常深的亚微米过程中越来越受约束的设计规则所施加的布局限制。在MMPL设计中,临界子电路和敏感节点可以被分成4,8,16或更多并行路径,以提供额外的硬度益处。 MMPL技术特别适合于关键的全局子电路,例如偏置电路和电压参考。智能剥离以不同的方式运行。代替Brute-Force¿¿¿¿¿的两个或多个信号路径中的线或¿¿¿¿¿¿在完全单独的子通道中,具有智能剥离的电路仅选择内部节点,使得击球路径被收集的电荷禁用,离开保持信号完整性的剩余路径。提出了MMPL和智能剥离的电路示例,模拟结果显示了在整个电路区域,功率或电气性能中没有显着惩罚的硬化连续时间AMS电路中这些概念的功效。

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