High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS2)

摘要

High-responsivity ultra-sensitive photodetectors are crucial for a broad range of applications in various fields. This work demonstrates a highly sensitive photodetector fabricated by using monolayer molybdenum disulfide (MoS₂), a promising semiconductor from the family of transition-metal dichalcogenide, showing a promising photoresponsivity (230 mA/W @532 nm) in the wavelength of visible light region.