All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

摘要

We successfully demonstrated experimentally the electrical-field mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration.