Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application

摘要

We demonstrate a technique for selective GeOx-scavenging which creates a GeOx-free IL on Si1-xGex substrates. This process reduces Nit by >60% to 2e11 and increases high-field mobility at Ninv=1e13 cm-2 by ~1.3× in Si0.6Ge0.4 pFETs with sub-nm EOT.