Reliable GaN HEMT modeling based on Chalmers model and pulsed S-parameter measurements

摘要

GaN HEMT performance is still compromised by trapping effects, but no commercial circuit simulator already provides compact models that account for these effects. This work explores the capability of a standard Chalmers (Angelov) model to accurately predict the power amplifier operation of GaN HEMTs. It is shown that relying on pulsed S-parameters and by restricting the model to be valid only for a fixed drain voltage, good simulation accuracy is achieved.