The computer simulation of the processes of the nanoscale film's growth and annealing during magnetron sputtering

摘要

The processes of growth and annealing of thin films during magnetron sputtering at atomic and molecular level in different conditions are considered and simulated. It is shown how and what influences on the quality of the films. During interleaved mode, the process of growth and annealing of thin films is simulated by Monte-Carlo method with a choice of numbers of particles and quasi-Newton method of lattice, with the definition of the direction of particle's motion. The process of fractal growth in different conditions is analyzed. The possibility of effective control of the process of growth of thin films is discussed.