Large area MoS2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS2/p-InGaN diode

摘要

Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.