Stochastic resonance (SR) in nanodevice parallel network systems is described. The SR is a phenomenon in which the response of the system is enhanced by adding noise. Parallel network of GaAs-based nanowire field-effect transistors (FETs) operating in subthreshold region exhibits enhanced signal response by noise addition. Input-output signal correlation shows a peak in optimal noise, confirming the appearance of the SR. Massive parallelism realizes robustness against fluctuation of noise intensity. For ultra-low-power electronic SR, a single-electron quantum dot (QD) parallel network system is investigated by simulation and theoretical analysis. The mechanism and detail behaviors are discussed.
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