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CMOS integrated tungsten oxide nanowire networks for ppb-level hydrogen sulfide sensing

机译:用于ppb级硫化氢传感的CMOS集成氧化钨纳米线网络

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We present H2S gas sensor devices based on tungsten oxide nanowire networks, which are integrated on CMOS fabricated microhotplate chips. Such CMOS integrated systems are promising candidates for realizing smart sensor devices for consumer market applications. The CMOS tungsten oxide gas sensors were prepared by the deposition of nanowire networks onto interdigitated electrodes on CMOS microhotplates via drop-coating. Drop-coating of a nanowire suspension represents a simple and cost-effective technique for mass production of tungsten oxide nanowire network gas sensors. Utilizing this tungsten oxide nanowire network as gas sensing material we could obtain extraordinary sensitivity to H2S: concentrations down to 100 ppb have been detected at different humidity levels. An optimum operating temperature could be determined, where the different humidity levels do not affect the sensor performance.
机译:我们呈现基于氧化钨纳米线网络的H2S气体传感器装置,其集成在CMOS制造的微壳芯片上。此类CMOS集成系统是对消费市场应用实现智能传感器设备的承诺候选者。通过滴涂层通过滴涂层沉积纳米线网络在CMOS微滤板上的ins分叉电极上制备CMOS氧化钨气体传感器。纳米线悬浮液的掉涂层代表了一种简单且经济高效的钨氧化物纳米线网络气体传感器技术。利用该氧化钨纳米线网络作为气体传感材料,我们可以获得对H 2 S的非凡敏感性:在不同的湿度水平下检测到下降至100ppb的浓度。可以确定最佳工作温度,其中不同的湿度水平不会影响传感器性能。

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