AlGaN/GaN HFET embedded GaN microcantilevers based potentiometric sensor

摘要

AlGaN/GaN Heterojunction Field Effect Transistor (HFET) embedded GaN piezotransistive microcantilevers are used as potentiometric sensors. 10mV potential difference between the cantilever tip and a metal electrode is successfully measured at the cantilever resonance frequency. Moreover, quality factor enhancement of the cantilever at low pressure is demonstrated.