Fast model generation for AlGaN/GaN HEMTs with the consideration of self-heating and charge trapping effects

摘要

In this paper, a large signal model for AlGaN/GaN HEMTs is proposed which accounts for the thermal and trapping effects. Polynomials and overdetermined system is introduced to better address the complex thermal effect. The extraction is simple and fast compared with empirical models, since only solving overdetermined linear equations is required for the extraction of Ids. The extracted trapping and thermal related nonlinear coefficients are then represented by artificial neural network. Finally, a large signal model is constructed in Advanced Design System, and good agreements have been observed between the measured and simulated S-parameters, bias current, Pout, Gain and PAE under both 50Ohm and optimal load, which further validates the proposed model.