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Heterogeneous microwave and millimeter-wave system integration using quilt packaging

机译:使用被子包装的异质微波和毫米波系统集成

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Quilt Packaging (QP) is a direct chip-to-chip edge-interconnect technology that offers extremely low interconnect loss and can be implemented on a variety of substrates. We report here the experimental demonstration of heterogeneous integration between Si and GaAs substrates. Ultrawide-bandwidth Quilt Packaging coplanar waveguide interconnects between Si and GaAs chips are presented along with preliminary thermal shock data. Fabricated structures on ~100 μm thick Si and GaAs chips exhibited chip-to-chip insertion losses below 0.5 dB up to 170 GHz, and below 1 dB up to 220 GHz from on-chip S-parameter measurements. Simulated results on a heterogeneous Si-GaAs quilted chipset on scaled QP interconnect exhibited chip-to-chip insertion losses below 0.5 dB up to 300 GHz, and below 1.5 dB up to 750 GHz. Despite the coefficient of thermal expansion mismatch between Si and GaAs, the interconnects also exhibited no adverse effects from thermal shock testing through 1250 cycles.
机译:被子封装(QP)是一种直接的芯片对芯片边缘互连技术,具有极低的互连损耗,可以在各种基板上实现。我们在此报告Si和GaAs衬底之间异质集成的实验演示。展示了Si和GaAs芯片之间的超宽带被子封装共面波导互连以及初步的热冲击数据。在大约100μm厚的Si和GaAs芯片上制造的结构,从片上S参数测量得出,芯片到芯片的插入损耗在170 GHz以下时低于0.5 dB,在220 GHz以下时则低于1 dB。在按比例缩放的QP互连上的异质Si-GaAs quil缝芯片组上的仿真结果显示,芯片对芯片的插入损耗在300 GHz以下时低于0.5 dB,而在750 GHz时则低于1.5 dB。尽管Si和GaAs之间的热膨胀系数不匹配,但在1250个周期内进行的热冲击测试也未对互连造成不利影响。

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