Simulating the Behavior of a Bipolar Filamentary ReRAM cell for Upcoming Memory Devices

摘要

The fundamental processes of a filamentary bipolar ReRAM cell were investigated using finite element simulation tools. The Forming, Set and Reset processes were simulated. All processes were simulated considering the migration of ionic species. Different scenarios for forming were considered and seem feasible. The reset and set process showed that different scenarios are possible however bipolar characteristic cannot be simulated entirely by considering the migration of ionic species and charged defects alone.