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Sub-100 ps single photoelectron time resolution of a strip silicon photomultiplier for time-resolved optical spectroscopy

机译:条形硅光电倍增管的低于100 ps的单光电子时间分辨率,用于时间分辨光谱

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SiPM with epitaxial quenching resistors developed at NDL (Novel Device Laboratory, Beijing) could alleviate the conflict between large dynamic range and high photon detection efficiency (PDE). It can be used as low light level detector in various applications with excellent single photoelectron time resolution (SPTR) and photon counting capacity. SPTR is mainly determined by the intrinsic structure parameters of the SiPM. However, it is also limited to measurement setup, electronics readout and the ultra-small signal of single photoelectron level. In this work, we designed and fabricated a 1 mm × 1 mm strip SiPM array for possible applications in time-resolved optical spectroscopy. The SiPM array consists of sixteen 50 μm ×1 mm strip SiPM elements. Each element contains five hundred 6.5 μm × 6.5 μm micro avalanche photodiode (APD) cells with 10μm pitch. The strip SiPM demonstrated SPTR of 68 ps (FWHM), peak PDE of 17% around 450 run and high photon number resolving and photon counting capability.
机译:NDL(北京新型设备实验室)开发的带有外延淬火电阻的SiPM可以缓解大动态范围和高光子检测效率(PDE)之间的矛盾。它具有出色的单光电子时间分辨率(SPTR)和光子计数能力,可在各种应用中用作低光水平检测器。 SPTR主要由SiPM的固有结构参数确定。但是,它也仅限于测量设置,电子设备读数和单光电子能级的超小信号。在这项工作中,我们设计并制造了1 mm×1 mm的条状SiPM阵列,以用于时间分辨光谱学中的可能应用。 SiPM阵列由16个50μm×1 mm条状SiPM元件组成。每个元件包含500个6.5μm×6.5μm间距为10μm的微雪崩光电二极管(APD)单元。 SiPM剥离带的SPTR为68 ps(FWHM),在450游程附近的峰值PDE为17%,并且具有高光子数解析度和光子计数能力。

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