TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic Parameters of GEWE-SiNW MOSFET

摘要

In this paper, extrinsic parameters of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET are analyzed in terms of parasitics capacitances, resistances and inductances using 3D-TCAD device quantum simulations. All simulations have been performed using ATLAS and DEVEDIT-3D device simulators. Simulation results reveal significant reduction in intrinsic and extrinsic parameters of GEWE-SiNW in comparison to its conventional SiNW MOSFET. Also, significant improvement in the intrinsic gate and drain transconductance of GEWE-SiNW in comparison its counterpart. Hence, provide its efficacy in high speed switching applications.