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Effect of point defect in the electronic structure of single layer graphene on Cu substrate

机译:点缺陷对铜基单层石墨烯电子结构的影响

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Point defect in mono-layer graphene on Cu substrate shows significant change in electronic structure in comparison to without the presence of defect. Our attempt to observe the electronic structure of mono-layer graphene on Cu substrate shows the band-structure, binding energy and density of states. Well established density functional theory (DFT) calculation has been performed to study the stability and scalability and other physical properties of the structure. Study of vacancy in graphene on Cu substrate therefore can be a new platform for study of disordered graphene and such study could be a benchmark for the field of electronics.
机译:与不存在缺陷相比,Cu衬底上单层石墨烯中的点缺陷显示出电子结构的显着变化。我们尝试观察Cu衬底上单层石墨烯的电子结构表明其能带结构,结合能和态密度。已经进行了完善的密度泛函理论(DFT)计算,以研究结构的稳定性和可扩展性以及其他物理特性。因此,研究Cu衬底上石墨烯中的空位可以成为研究无序石墨烯的新平台,并且该研究可以作为电子学领域的基准。

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