Electronic structures of graphene layers on a metal foil: The effect of atomic-scale defects

摘要

Here we report a facile method to generate a high density of point defects ingraphene on metal foil and show how the point defects affect the electronicstructures of graphene layers. Our scanning tunneling microscopy (STM)measurements, complemented by first principle calculations, reveal that thepoint defects result in both the intervalley and intravalley scattering ofgraphene. The Fermi velocity is reduced in the vicinity area of the defect dueto the enhanced scattering. Additionally, our analysis further points out thatperiodic point defects can tailor the electronic properties of graphene byintroducing a significant bandgap, which opens an avenue towards all-grapheneelectronics.