Design of 60 GHz CMOS on-chip dipole antenna with 50 radiation efficiency by helium-3 ion irradiation

摘要

In this paper, a 60 GHz CMOS on-chip dipole antenna with helium-3 ion irradiated silicon substrate is designed using knowledge of electromagnetic simulation modeling. Rectangular region with 500 um × 1000 um around the dipole is irradiated by helium-3 ion and conductivity is reduced to 0.01 S/m (1 k Ohm cm). The width of dipole section is wide for broad bandwidth and reduction of conductor loss. There are a taper section and stub for impedance matching. A backing metal reduces back radiation. At 62 GHz, the calculated reflection, radiation efficiency and gain are -15 dB, 48 % and 2.7 dBi, respectively.