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A new in-field bad block detection scheme for NAND flash chips

机译:一种新的NAND闪存芯片现场坏块检测方案

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A NAND flash system has been adopted as storage. However, due to its distinctive operation mechanisms, it endures only the limited number of program/Erase cycles. So, bad blocks are inevitably developed during the life time of the storage system. A bad block is a block that contains faulty bits that cannot be covered by ECC. In this paper, a novel in-field bad block detection scheme is proposed. Through simple write verifications, the proposed bad block detector finds bad blocks in real-time, and ensures that written data is reliable. The detection method includes neither costly data-mirroring nor complex ECC processing, but it requires an additional detection module of which size is less than 0.15% of the controller size.
机译:NAND闪存系统已被用作存储。但是,由于其独特的操作机制,它只能承受有限数量的编程/擦除周期。因此,在存储系统的使用寿命期间不可避免地会产生坏块。坏块是包含无法由ECC覆盖的错误位的块。本文提出了一种新的现场坏块检测方案。通过简单的写验证,提出的坏块检测器可以实时发现坏块,并确保写入数据的可靠性。该检测方法既不包括昂贵的数据镜像,也不包括复杂的ECC处理,但是它需要一个尺寸小于控制器尺寸的0.15%的附加检测模块。

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