van der Waals junctions of layered 2D materials for functional devices

摘要

We fabricated van der Waals (vdW) junctions of two-dimensional (2D) crystals using mechanical exfoliation and transfer technique of atomic layers. By connecting cleaved flakes of Fe0.25TaS2, van der Waals magnet tunnel junction was constructed, exhibiting tunneling magnetoresistance effect. In addition, large current modulation with ON-OFF current ratio exceeding 105 and ON current density of 104 A/cm2 was achieved in metal/MoS2/graphene vertical FET. Josephson effect was demonstrated in van der Waals NbSe2/NbSe2 junctions.