High-performance photonic BiCMOS process for the fabrication of high-bandwidth electronic-photonic integrated circuits

摘要

An advanced photonic BiCMOS process is demonstrated capable, on the receiver side, for 100 Gb/s optical line rate. Key components of this process are monolithically integrated wave-guide Ge photodiodes showing more than 70 GHz bandwidth and 1 A/W responsivity, and SiGe HBTs with fT/fmax values of 240/290 GHz.