GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 m¿¿¿-cm2: A record high figure-of-merit of 12.8 GW/cm2

摘要

We report GaN p-n diodes on free-standing GaN substrates: a record high Baliga's figure-of-merit (VB2/ Ron) of 12.8 GW/cm2 is achieved with a 32 ¿¿m drift layer and a diode diameter of 107 ¿¿m exhibiting a BV > 3.4 kV and a Ron