Analytical loss model for power converters with SiC MOSFET and SiC schottky diode pair

摘要

In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devices is proposed. A novel feature of this loss model is that it considers the package and PCB parasitic elements in the circuits, nonlinearity of device junction capacitance and ringing loss. The proposed model identifies the switching waveform subintervals, and develops the analytical equations in each switching subinterval to calculate the switching loss. Inductive turn-on and turn-off are thoroughly analyzed. A double pulse test-bench is built to characterize inductive switching behavior of the SiC devices. The analytical results are compared with experimental results. The results show that the proposed loss model can predict switching loss more accurately than the conventional loss model.