Small signal and microscopic noise simulation of an nMOSFET by a self-consistent, semi-classical and deterministic approach

摘要

We present fully self-consistent small signal and microscopic noise simulations of a nanoscale double-gate nMOSFET by a semi-classical and deterministic approach. We show how such a system of Poisson, Schrödinger and Boltzmann equations can be used to self-consistently determine several key quantities relevant to circuit designers.