5 × 20 Gb/s III-V on silicon electroabsorption modulator array heterogeneously integrated with a 1.6nm channel-spacing silicon AWG

摘要

We demonstrate a five-channel wavelength division multiplexed modulator module that heterogeneously integrates a 1.6nm channel-spacing arrayed-waveguide grating and a 20Gbps electroabsorption modulator array, showing the potential for 100 Gbps capacity on a 1.5×0.5 mm footprint.