Gan-on-diamond wafers: Recent developments

摘要

In this work, we discuss the state-of-the-art of GaN-on-diamond wafer technology at Element Six. We report our recent demonstration of 100mm (4") GaN-on-diamond HEMT epitaxial wafers-with the highest thermal conductivity of diamond (>1500 W/mK) yet. The wafers exhibit <;20μm bow mounted on-carrier, sheet resistivity of <;450 Ohms/sq, and CV specs that are in-line with industry expectations.