Operating a SiC-MOSFET in an inverter phase leg will result in using it in the reverse direction. As the parasitic pn-diode shows a non-favourable characteristic, the aim of this paper is to increase the performance by minimizing the dead-time between the opposite MOSFETs, thus trying to eliminate the bipolar diode effect. The effect on the reverse recovery and the overvoltage was investigated depending on current and temperature. A dead-time providing minimum losses could be identified.
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