We fabricated relaxed GeSn pTFETs on Si(001). The devices show much higher I than SiGe, Ge, and compressively strained GeSn planer pTFETs in literatures. For the first time, I enhancement in GeSn pTFET utilizing uniaxial strain is reported. By applying 0.14% uniaxial tensile strain along channel direction, GeSn [110] pTFETs achieve ~ 10% I improvement, over relaxed devices at |V - V| = |V| = 1.0 V. Calculation demonstrates that the reduction of direct E by tensile strain results in an enhanced G in GeSn, leading to improvement of I in uniaxially tensile strained pTFET.
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