An embedded ReRAM using a small-offset sense amplifier for low-voltage operations

摘要

This paper presents a Contact Resistive Random Access Memory (CRRAM) macro with an offset-compensated Sense amplifier for low-voltage operation. The proposed circuit aims to solve the variation and speed issues during low-voltage operations. A 256Kb test-chip was fabricated in TSMC 65nm technology. An improvement of 1.78x in read speed and 85.7% in offset was measured compared to conventional sensing methods, and the minimum operating voltage was as low as 0.3V.