Low phase noise oscillators are essential building blocks in the front end of all communication systems. With the continuous demand for higher data rates and reduced size, weight, and power consumption, significant research in the past decade has been geared toward integrating high-Q GHz frequency MEMS resonators with standard circuit technologies. This paper presents monolithic integration of GaN MEMS resonators in GaN MMIC technology, which has become mainstream in RF LNA and PA design. Groups at MIT, Michigan and IEMN have previously demonstrated GaN MEMS resonators co-fabricated with HEMTs. This work is the demonstration of a single-chip closed-loop oscillator circuit implementing both passive and active devices in this growing technology platform.
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