Fabrication of SiGe HBT integrated SOI CMOS

摘要

In this paper, an approach of developing the SOI CMOS vertical heterojunction bipolar transistor (HBT) is presented. With a novel all-depletion collector structure, the compatibility of HBT with MOS device in structure and process can be realized on a very thin SOI film, thus providing a new solution to producing high-performance integrated circuits.