首页> 外文会议>International Conference on Circuit, Power and Computing Technologies >Circuit level technique for mitigating effects of NBTI for wide fan-in domino logic circuits using supply voltage tuning
【24h】

Circuit level technique for mitigating effects of NBTI for wide fan-in domino logic circuits using supply voltage tuning

机译:利用电源电压调谐,用于使用电源电压调谐的宽带扇形Domino逻辑电路宽度效果的电路级技术

获取原文

摘要

Transistor ageing has been a major problem as far as nanometre technology is concerned which leads to performance degradation and reliability issues. Ageing in pMOS transistor takes place due to Negative bias temperature instability (NBTI) which is a major threat in reliability as Iscale down the transistor geometries aggressively in our quest for low power and high performance. Overcoming ageing effect requires additional power expense, which in turn aggravates the power and heating problem. I propose an adaptive supply voltage (ASV) scheme as an arguably power efficient approach for variation resilience since it attempts to allocate power resources only where the negative effect of ageing is strong. Upon implementing the proposed approach on a host of domino logic circuits which include Current comparison domino (CCD) Ihave mitigated the rise in delay problem by suitably allocating a supply voltage so that the delay specifications are continuously met even after a lifespan of 10 years of operation at the expense of very low power headroom. Simulations have been performed using the BSIM4v4.7 model & 32 nm predictive technology model in SILVACO EDA tool at a frequency of 2 GHz and nominal supply voltage of 0.9V. The proposed approach has been implemented on 32 bit & 64 bit OR gates and also on 32 bit comparator and the results have been noteworthy.
机译:晶体管老化一直是一个主要的问题就纳米技术而言这会导致性能下降和可靠性问题。在pMOS晶体管老化发生因负偏压温度不稳定性(NBTI),这是可靠性的主要威胁ISCALE下积极晶体管的几何形状,我们追求低功耗和高性能。克服老化效应需要额外的功率代价,这又加剧了功率和发热问题。我建议一个自适应电源电压(ASV)方案作为用于变异弹性的可以说是功率有效的方法,因为它试图仅其中老化的负面影响是很强的分配功率资源。一旦实现多米诺逻辑电路,该电路包括电流比较骨牌的主机上所提出的方法(CCD)IHAVE通过甚至10年的运行寿命后适当地分配供给电压,使得延时规范连续满足减轻在延迟问题的上升在非常低的功率余量为代价的。模拟已经使用在SILVACO EDA工具的BSIM4v4.7模型&32nm的预测技术模型在2GHz和0.9V标称电源电压的频率进行。所提出的方法已经实现在32位和64位或门,并且还在32位比较器,结果已经值得注意。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号