Si Layers Transfer On Sapphire or Silicon with High-k Stack of PEALD Dielectric Nanolayers

摘要

The transfer of thin layers of silicon or another material by implanted hydrogen ions on dielectric (sapphire, silicon dioxide) or semiconductor (silicon with thin oxide layers) substrates must be able to bond these materials with different lattices and / or the coefficients of thermal expansion in order to allow annealing of the defects and technological operations at elevated temperatures. Initially amorphous layers deposited on the substrate by plasma enhanced atomic layer deposition (PEALD) also contain hydrogen in a concentration of several at.%, which along with the implanted and diffused to the bonding interface H atoms lead to the formation of blisters and flaking of the transferred film at high temperature annealing. Pre-implantation of ions from the atmosphere to the substrate and subsequent thermal treatment allows to getter and bind H atoms in the layer disordered by implantation inside the substrate and prevent the formation of hydrogen blisters at the bonding interface during subsequent heat treatment of silicon-on-insulator (SOI) and silicon-on-sapphire (SOS) structures with ultra-thin interlayer stacks of high-k dielectrics. This procedure allows producing SOI heterostructures with ultrathin high-k dielectric buried oxide (UTBOX) with equivalent oxide thickness (EOT) below 5 nm.