Statistical Characterization and Modelling of Gate-Induced Drain Leakage Variability in Advanced FDSOI Devices

机译：高级FDSOI装置中栅极诱导漏极泄漏变异性的统计表征及建模

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A detailed statistical characterization of gate-induced drain leakage variability in FDSOI devices is carried out. An analytical model is developed for the drain current variability, covering the on-state and off-state MOSFET operation regions.

机译：进行了FDSOI装置中栅极诱导的漏极泄漏变异性的详细统计表征。开发了一种分析模型，用于漏极电流可变性，覆盖导通状态和断开状态MOSFET操作区域。

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《SOI-3D-Subthreshold Microelectronics Technology Unified Conference》|2019年|1-2|共2页
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T. A. Karatsori; C. Cavalcante; J. Lacord; P. Batude; C. Theodorou; G. Ghibaudo;
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关键词
Logic gates; MOSFET; Silicon-on-insulator; Standards; Geometry; Doping; Analytical models;

机译：逻辑门;MOSFET;绝缘体;标准;几何;兴奋剂;分析模型;

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专利

1. A novel double offset-implanted source/drain technology for reduction of gate-induced drain-leakage with 0.12-/spl mu/m single-gate low-power SRAM device [J] . Sang-Hun Seo, Won-Suk Yang, Han-Sin Lee, IEEE Electron Device Letters . 2002,第12期

机译：一种新颖的双偏置注入源极/漏极技术，可通过0.12- / splμm/ m单栅极低功耗SRAM器件来减少栅极感应的漏极泄漏
2. Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET [J] . J. Wan, C. Le Royer, A. Zaslavsky, Microelectronic Engineering . 2011,第7期

机译：FD-SOI器件中栅极引起的漏极泄漏：TFET对MOSFET的启示
3. Gate-induced drain leakage current in MOS devices [J] . Nathan V., Das N.C. IEEE Transactions on Electron Devices . 1993,第10期

机译：MOS器件中栅极感应的漏极泄漏电流
4. All-operation-regime characterization and modeling of drain current variability in junctionless and inversion-mode FDSOI transistors [C] . D. Bosch, J.P. Colinge, G. Ghibaudo, IEEE Symposium on VLSI Technology . 2020

机译：无连接和反转模式FDSOI晶体管中排水电流变异性的全动态制度表征和建模
5. Variability Modeling and Statistical Parameter Extraction for CMOS Devices [D] . Qian, Kun 2015

机译：CMOS器件的可变性建模和统计参数提取
6. Statistical Shape Modeling for Cavopulmonary Assist Device Development: Variability of Vascular Graft Geometry and Implications for Hemodynamics [O] . Jan L Bruse, Giuliano Giusti, Catriona Baker, -1

机译：辅助肺辅助装置开发的统计形状建模：血管移植物几何的变异性及其对血流动力学的影响
7. Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature [O] . Edoardo Catapano, Gerard Ghibaudo, Mikael Casse, 2021

机译：室温下FDSOI四栅量子位MOS装置的统计和电气建模
8. Gate-Induced Drain Leakage Current in MOS Devices [R] . Nathan, V., Das, N. C. 1993

机译：mOs器件中栅极引漏漏电流

Statistical Characterization and Modelling of Gate-Induced Drain Leakage Variability in Advanced FDSOI Devices

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