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Advances in 3D Heterogeneous Structures and Integration for Future ICs (Invited)

机译:3D异构结构的进步和未来IC(邀请)的集成

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This paper reviews recent advances in developing 3D heterogeneous structures and integration technologies for future integrated circuits (IC) addressing the challenges related to the Moore's Law. Novel 3D heterogeneous structures, including nano crossbar phase-switching and graphene NEMS electrostatic discharge (ESD) protection devices, compact vertical inductors with stacked-via magnetic cores, in backend-of-line (BEOL) crosstalk isolation structures, and multi-gate transistors, are presented as enablers for future smart chips.
机译:本文审查了为未来的集成电路(IC)开发3D异构结构和集成技术的最新进展,这些综合电路(IC)解决了与摩尔定律有关的挑战。新型3D异构结构,包括纳米横杆相位切换和石墨烯NEMS静电放电(ESD)保护装置,具有堆叠通孔磁芯的紧凑型垂直电感,在线后端(BEOL)串扰隔离结构,以及多栅极晶体管,被呈现为未来智能芯片的推动者。

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