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Fabrication of integrated micrometer platform for thermoelectric measurements

机译:集成的用于热电测量的千分尺平台的制造

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Good electrical performance of Silicon enables high harvested power density allowing Silicon to compete with conventional thermoelectric materials such as BiTe or SbTe. High value of thermal conductivity eliminating the use of Silicon in thermoelectricity is no longer an unbeatable drawback since the possibility of reduction has been established and confirmed. Thermal conductivity reduction by a factor 3 over bulk value is reported in 70nm thick Silicon. The Silicon thermal conductivity can be reduced even 100× over bulk when using dedicated patterning which can block the propagation of phonons responsible for heat transport [3]. This reduction will have significant influence in launching industrialization of CMOS compatible thermogenerators.
机译:硅的良好电性能可实现高的功率密度,从而使硅可以与传统的热电材料(例如BiTe或SbTe)竞争。消除了在热电中使用硅的高导热率值不再是无与伦比的缺点,因为已经确定并证实了降低的可能性。据报道,在厚度为70nm的硅中,导热系数比体积值降低了3倍。当使用专用的构图时,硅的导热系数甚至可以降低100倍以上,这可以阻止负责传热的声子的传播[3]。这种减少将对启动与CMOS兼容的热发生器的工业化产生重大影响。

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