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Timing analysis and optimization of voltage scaled CMOS digital circuits with dual-Vth devices

机译:采用双V 器件的电压缩放CMOS数字电路的时序分析和优化

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Supply voltage scaling greatly reduces the power consumption of circuits and is typically used in applications with loose speed constraints but tight power budgets. However, without digital standard cell libraries characterized at low voltages, integration of this technique is difficult in the semi-custom design flow. Thus, digital circuits are synthesized at the nominal voltage and their operating frequency is estimated at low voltages. However, this existing approach does not guarantee the timing of circuits containing standard cells with multiple threshold voltages whose delays scale differently as the supply voltage decreases. Slow high V non-critical paths are at risk of becoming critical paths at lower voltages that can cause timing errors. A new framework for timing analysis and removal of violating paths is then proposed for dual-V circuits. The framework is integrated in a 65nm CMOS digital flow and is verified using an 8-bit microcontroller core as the input design. The method successfully eliminated violating paths but the 35%-61% delay margin of the standard cell libraries contributed to the delay estimation errors.
机译:电源电压定标极大地降低了电路的功耗,通常用于速度限制宽松但电源预算紧张的应用中。但是,如果没有以低电压为特征的数字标准单元库,则在半定制设计流程中很难集成此技术。因此,数字电路是在标称电压下合成的,其工作频率是在低电压下估算的。但是,这种现有方法不能保证包含具有多个阈值电压的标准单元的电路的时序,该阈值电压的延迟随电源电压的降低而不同。缓慢的高V非关键路径处于在较低电压下变为关键路径的风险,这可能会导致时序错误。然后为双V电路提出了一种用于时序分析和消除违规路径的新框架。该框架集成在65nm CMOS数字流中,并使用8位微控制器内核作为输入设计进行了验证。该方法成功地消除了违规路径,但是标准单元库的35%-61%延迟裕度导致了延迟估计误差。

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