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Timing analysis and optimization of voltage scaled CMOS digital circuits with dual-Vth devices

机译:用双V DEB的电压缩放CMOS数字电路的时序分析和优化

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Supply voltage scaling greatly reduces the power consumption of circuits and is typically used in applications with loose speed constraints but tight power budgets. However, without digital standard cell libraries characterized at low voltages, integration of this technique is difficult in the semi-custom design flow. Thus, digital circuits are synthesized at the nominal voltage and their operating frequency is estimated at low voltages. However, this existing approach does not guarantee the timing of circuits containing standard cells with multiple threshold voltages whose delays scale differently as the supply voltage decreases. Slow high V non-critical paths are at risk of becoming critical paths at lower voltages that can cause timing errors. A new framework for timing analysis and removal of violating paths is then proposed for dual-V circuits. The framework is integrated in a 65nm CMOS digital flow and is verified using an 8-bit microcontroller core as the input design. The method successfully eliminated violating paths but the 35%-61% delay margin of the standard cell libraries contributed to the delay estimation errors.
机译:电源电压缩放大大降低了电路的功耗,并且通常用于具有松动速度约束但电源预算紧张的应用中。然而,在没有低电压的数字标准单元库的情况下,在半定制设计流程中难以实现该技术的集成。因此,在标称电压下合成数字电路,并且它们的工作频率在低电压下估计。然而,这种现有方法不保证包含具有多个阈值电压的标准电池的电路的定时,其延迟刻度随电源电压降低而变化。缓慢的V V非关键路径有可能成为可能导致定时误差的较低电压处的关键路径。然后提出了用于双V电路的时序分析和移除违规路径的新框架。该框架集成在65nm CMOS数字流中,并使用8位微控制器核心作为输入设计进行验证。该方法成功消除了违规路径,但标准单元库的35%-61%延迟余量导致延迟估计误差。

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