Channeling effect and energy contamination evaluations of B-based beam-line ULE implants - Tools and recipe set-up dependence

摘要

We extensively investigate tool and recipe set-up dependence of the ultra-shallow junctions (USJ) doped by the boron-based ultra-low energy (ULE) beam-line (BL) implants. Recipes set-up includes different tools, energies, implant temperatures, and deceleration ratios. Channeling effect and energy contamination issues are de-coupled by drift and deceleration mode implants. A channeling effect factor (CEF) is defined and quantified. Channeling effect is found to be a major factor causing deeper profiles and long tails (x). Channeling effect gets worse when the implant energy is reduced due to less self-PAI effect (with less damage). Low temperature (−100 °C) implant does not effectively reduce channeling effect. Deceleration mode implant increases tail (x) due to energy contamination as a secondary order effect.