Performance Projection of Vertical High-Voltage GaN power MOSFETs and Comparison to 4H-SiC power MOSFETs

摘要

Vertical GaN power MOSFETs with BV ratings of1.2 kV to 10 kV have been designed and simulated. DC andswitching performance has been quantitatively evaluated andcompared to 4H-SiC MOSFETs. GaN MOSFETs are found tohave significantly lower on-resistance and better switchingperformance.