High bandwidth silicon Mach-Zehnder modulator based on interleaved PN junctions

摘要

We experimentally demonstrate a high bandwidth silicon Mach-Zehnder modulator based on interleaved PN junctions using standard 130nm CMOS platform. A modulation efficiency of 2.4 V·cm is achieved in an MZM with a 1.5 mm-long phase shifter. High small signal electro-optical response of 34 GHz was measured, indicating a data transmission capability of up to 70 Gbps. Eye diagrams for different modulation speed up to 50 Gbps with 5.6 dB extinction ratio was experimentally demonstrated.