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High-Performance InGaN/GaN Quantum-Disks-in-Nanowires Light-Emitters for Monolithic Metal-Optoelectronics

机译：高性能IngaN / GaN量子 - 纸盘 - 用于单片金属光电子的纳米线光发射器

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摘要

The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.

机译：钼基板上的第一个无下垂，可靠和高功率的Ingan / GaN量子 - 盘纳米线发光二极管。通过高质量纳米线在全金属堆叠的锡/ Ti / mo上的高质量纳米线的外延生长来实现高性能。

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《Asia Communications and Photonics Conference》|2016年|763p|共3页
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作者
Chao Zhao; Tien Khee Ng; Nini Wei; Bilal Janjua; Rami T. ElAfandy; Aditya Prabaswara; Chao Shen; Giuseppe Bernardo Consiglio; Abdulrahman Albadri; Ahmed Y. Alyarnani; Munir M. El-Desouki; Boon S. Ooi;
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中图分类 TN91-53;
关键词
Light emitting diodes; Nanowires; Substrates; Silicon; Chaotic communication; Heating systems; Photonics;

机译：发光二极管;纳米线;基板;硅;混沌通信;加热系统;光子学;

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专利

1. Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters [J] . Zhao Chao, Ng Tien Khee, Wei Nini, SIAM journal on applied dynamical systems . 2017,第2期

机译：高功率光发射器的散装金属基板上的高质量Ingan / GaN量子磁盘的体面形成
2. Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters [J] . Zhao Chao, Ng Tien Khee, Wei Nini, Nano letters . 2016,第2期

机译：在大功率发光体的大块金属衬底上方便地形成高质量的InGaN / GaN纳米线纳米线。
3. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light Emitting Diodes for Monolithic Metal-Optoelectronics [J] . Zhao Chao, Ng Tien Khee, ElAfandy Rami T., Nano letters . 2016,第7期

机译：用于单片金属光电的无下垂，可靠且高功率的InGaN / GaN纳米线发光二极管
4. High-Performance InGaN/GaN Quantum-Disks-in-Nanowires Light-Emitters for Monolithic Metal-Optoelectronics [C] . Chao Zhao, Tien Khee Ng, Nini Wei, Asia Communications and Photonics Conference . 2016

机译：用于单片金属光电子学的高性能InGaN / GaN纳米线量子盘光发射器
5. High Performance UV Photodetector and Monolithic Integration of LED and Photodetector on p-GaN/AlGaN/GaN Heterostructure Grown on Si [D] . Lyu, Qifeng. 2021

机译：高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
6. Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN [O] . Y. Gong, L. Jiu, J. Bruckbauer, -1

机译：在图案化非极性GaN上生长的InGaN的单片多色发射
7. Facile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters [O] . Zhao Chao, Ng Tien Khee, Wei Nini, 2016

机译：在大功率发光体的大块金属基板上方便地形成高质量的InGaN / GaN纳米线量子盘
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

High-Performance InGaN/GaN Quantum-Disks-in-Nanowires Light-Emitters for Monolithic Metal-Optoelectronics

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