In this work, HfO_2 based resistive random access memory (RRAM) is fabricated and 3-bit storage capacity per cell is demonstrated under both DC and AC mode. In the AC mode, a new operation scheme of balancing set process and reset process is proposed to improve the resistance distribution uniformity (relative standard deviation about 21.1%). The relatives between set and reset parameters are also discussed and a simple model is used to explain these results.
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