nBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation

摘要

This paper reports on response time of mid-wavelength infrared nBn detector based on type-II 10 Monolayer/10 Monolayer InAs/GaSb superlattice structure with AlGaSb barrier. The detector structure is simulated with the numerical platform APSYS by Crosslight Inc. A detailed analysis of response time as a function of bias is performed and compared to experimental nBn detector results and PIN type-II InAs/GaSb photodiode. Time response of the nBn detector with peak wavelength, λ = 4.4 μm at T = 200 K, V = 500 mV and series resistance, R = 100 Ω is estimated τ ≈ 340 ps.