Analysis of stray inductance's influence on SiC MOSFET switching performance

摘要

This paper mainly discusses the influence of stray inductance on the switching performance of SiC MOSFET. For package with three leads, stray inductance at the source electrode is shared by the driving path and power path, which can reduce the switching speed and lead to increased power loss. A double pulse test bench is designed to verify the analysis. Based on the test bench, a direct bond copper substrate is designed to eliminate the shared inductance.