20 Gb/s WDM Optical RAM Row Architecture based on four Monolithic Integrated InP Memory Cells

摘要

A complete 4-bit WDM-enabled all-optical RAM Row architecture with 20 Gb/s memory-bus throughput is experimentally presented for the first time, using four 5Gb/s monolithic InP Flip-Flops and a multi-wavelength Random Access and Column Selector peripheral circuit.